Search results for "sputter deposition"
showing 10 items of 93 documents
Tailoring of highly porous SnO2 and SnO2-Pd thin films
2019
Abstract Tin oxide is a material that attracts attention due to variety of technological applications. The main parameters that influence its properties are morphology, crystalline structure and stoichiometry. Researchers try to develop nanostructured thin films with tunable parameters that would conform its technological applications. Herein, we report on the preparation and characterization of highly porous SnO2 and Pd-doped SnO2 thin films. These films were deposited in the form of nanorods with controllable geometry. Such morphology was achieved by utilizing glancing angle deposition (GLAD) with assisted magnetron sputtering. This arrangement allowed preparation of slanted pillars, zig-…
Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers
2014
Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…
Synthesis and characterization of cobalt silicide films on silicon
2006
Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 d…
Recent Progress in FSMA Microactuator Developments
2009
The giant magneto-strain effect is particularly attractive for actuator applications in micro- and nanometer dimensions as it enables contact-less control of large deformations, which can hardly be achieved by other actuation principles in small space. Two different approaches are being pursued to develop ferromagnetic shape memory (FSMA) microactuators based on the magnetically induced reorientation of martensite variants: (1) the fabrication of free-standing epitaxial Ni-Mn-Ga thin film actuators in a bottom-up manner by magnetron sputtering, substrate release and integration technologies and (2) the top-down approach of thickness reduction of bulk Ni-Mn-Ga single crystals to foil specime…
Interface transparency and proximity effect in Nb/Cu triple layers realized by sputtering and molecular beam epitaxy
2004
We have investigated, in the framework of the proximity effect theory, the interface transparency T between Nb and Cu in the case of high quality Nb/Cu trilayers fabricated by molecular beam epitaxy (MBE) and sputtering deposition techniques. The obtained T values do not seem to be strongly influenced by the fabrication methods but more by the intrinsic properties of the two metals; a slightly higher value for T has even been deduced for the MBE prepared samples. The proximity effect in these samples has also been studied in the presence of an external magnetic field. In the parallel configuration a significant shift towards lower values of the 2D–3D crossover temperature has been observed …
Compositional dependence of element-specific magnetic moments in Ni2MnGa films
2009
Element-specific magnetic moments were investigated for epitaxial Ni2Mn1+xGa1−x and (Ni2MnGa)1−x(Co2FeSi)x Heusler films using x-ray absorption spectroscopy and x-ray circular magnetic dichroism in transmission. The epitaxial films of the Ni2MnGa-derived compositions were prepared by dc-sputtering on Al2O3 substrates at 773 K. X-ray diffraction confirms a (1 1 0) oriented growth. An increase in the Mn concentration reduces the magnetic spin moment of both Mn and Ni. An increase in the content of Co2FeSi in the Ni2MnGa compound leads to an increase in the Mn and Ni spin moments and to a decrease in Tm for 5% Co2FeSi and finally to a suppression of the phase transition for 20% Co2FeSi. The or…
X-ray absorption study of Ce?Ti oxide films
2001
Abstract X-ray absorption measurements at the Ce L 3 , L 1 and Ti K-edges have been done to study local structure and electronic properties of CeO 2 –TiO 2 thin films produced by reactive d.c. magnetron sputtering. The local environment around titanium and cerium ions can be described as pyramid-like and cube-like polyhedra, respectively, and the films are amorphous (correlation radius about 10 A). The analysis of Ce L 3 -edge XANES data has shown that the position of the Ce 4f 1 5d and 4f 0 5d states progressively shift towards lower energies with decreasing cerium dioxide content in the thin films.
Microwave Properties of Nb/PdNi/Nb Trilayers
2012
We combine wideband (1-20 GHz) Corbino disk and dielectric resonator (8.2 GHz) techniques to study the microwave properties in Nb/PdNi/Nb trilayers, grown by UHV dc magnetron sputtering, composed by Nb layers of nominal thickness $d_S$=15 nm, and a ferromagnetic PdNi layer of thickness $d_F$= 1, 2, 8 and 9 nm. We focus on the vortex state. Magnetic fields up to $H_{c2}$ were applied. The microwave resistivity at fixed $H/H_{c2}$ increases with $d_F$, eventually exceeding the Bardeen Stephen flux flow value.
Structural and electrical properties of magnetron sputtered Ti(ON) thin films:The case of TiN doped in situ with oxygen.
2009
International audience; Incorporation of oxygen into TiN lattice results in formation of titanium oxynitrides, TiOxNy that have become particularly interesting for photocatalytic applications. Elaboration as well as characterization of TiN and in situ oxygen-doped thin films is the subject of this paper. Thin films, 250–320nm in thickness, have been deposited by dc-pulsed magnetron reactive sputtering from Ti target under controllable gas flows of Ar, N2 and O2. Optical monitoring of Ti plasma emission line at = 500nm has been implemented in order to stabilize the sputtering rate. Scanning electron microscopy (SEM), X-ray diffraction in grazing incidence (GIXRD), micro-Raman spectroscopy, X…
Light absorption and electrical transport in Si:O alloys for photovoltaics
2010
Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was …